Alaei, MojtabaMojtabaAlaeiBorga, MatteoMatteoBorgaFabris, ElenaElenaFabrisDecoutere, StefaanStefaanDecoutereLauwaert, JohanJohanLauwaertBakeroot, BenoitBenoitBakeroot2024-08-222024-07-192024-08-2220240018-9383WOS:001263391500001https://imec-publications.be/handle/20.500.12860/44176Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping ProfileJournal article10.1109/TED.2024.3418292WOS:001263391500001THRESHOLD VOLTAGEDENSITY