High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers

Germain, MarianneMarianneGermainLeys, MaartenMaartenLeysBoeykens, StevenStevenBoeykensDegroote, StefanStefanDegrooteWang, WenfeiWenfeiWangSchreurs, DominiqueDominiqueSchreursRuythooren, WouterWouterRuythoorenChoi, Kang-HoonKang-HoonChoiVan Daele, B.B.Van DaeleVan Tendeloo, G.G.Van TendelooBorghs, GustaafGustaafBorghs2021-10-152021-10-152004-12https://imec-publications.be/handle/20.500.12860/8951High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayersProceedings paper