Lorenz, AnneAnneLorenzJohn, JoachimJoachimJohnDerluyn, JoffJoffDerluynCheng, KaiKaiChengDas, JoJoDasGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14065The influence of fluoride based gate etch process on the current collapse of AlGaN/GaN HEMTsMeeting abstract