Impact of the Ge content and the epitaxial thickness on the bandgap shrinkage induced leakage current of recessed Si1-xGex source/drain junctions

Bargallo Gonzalez, MireiaMireiaBargallo GonzalezSimoen, EddyEddySimoenVissouvanadin Soubaretty, BertrandBertrandVissouvanadin SoubarettyThomas, NicoleNicoleThomasTaleb, NadjibNadjibTalebVerheyen, PeterPeterVerheyenHikavyy, AndriyAndriyHikavyyLeys, FrederikFrederikLeysRichard, OlivierOlivierRichardLoo, RogerRogerLooClaeys, CorCorClaeysMachkaoutsan, VladimirVladimirMachkaoutsanTomasini, P.P.TomasiniThomas, S.G.S.G.ThomasLu, J.PJ.PLuWise, R.R.Wise2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/11698Impact of the Ge content and the epitaxial thickness on the bandgap shrinkage induced leakage current of recessed Si1-xGex source/drain junctionsProceedings paper