Comparative growth kinetics of SiGe in a commercial reduced pressure chemical vapour deposition EPI reactor and anomalies during growth of thin Si layers on SiGe

Caymax, MattyMattyCaymaxLoo, RogerRogerLooBrijs, BertBertBrijsVandervorst, WilfriedWilfriedVandervorstHoward, DaveDaveHowardKimura, K.K.KimuraNakajima, K.K.Nakajima2021-09-302021-09-301998https://imec-publications.be/handle/20.500.12860/2444Comparative growth kinetics of SiGe in a commercial reduced pressure chemical vapour deposition EPI reactor and anomalies during growth of thin Si layers on SiGeProceedings paper