Prospect of Hf-based gate dielectric by PVD with FUSI gate for LSTP application

Niwa, MasaakiMasaakiNiwaMitsuhashi, RiichirouRiichirouMitsuhashiYamamoto, KazuhikoKazuhikoYamamotoHayashi, S.S.HayashiHarada, Y.Y.HaradaKubota, M.M.KubotaRothschild, AudeAudeRothschildHoffmann, Thomas Y.Thomas Y.HoffmannKubicek, StefanStefanKubicekDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeynsBiesemans, SergeSergeBiesemans2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10934Prospect of Hf-based gate dielectric by PVD with FUSI gate for LSTP applicationMeeting abstract