Resolving fast VtH transients after program/erase of flash memory stacks and their relation to electron and hole defects

Toledano Luque, MariaMariaToledano LuqueDegraeve, RobinRobinDegraeveZahid, MohammedMohammedZahidKaczer, BenBenKaczerKittl, JorgeJorgeKittlJurczak, GosiaGosiaJurczakGroeseneken, GuidoGuidoGroesenekenVan Houdt, JanJanVan Houdt2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/16314Resolving fast VtH transients after program/erase of flash memory stacks and their relation to electron and hole defectsProceedings paper