Source/drain junction integration issues in submicron Ge MOSFETs

Simoen, EddyEddySimoenSatta, AlessandraAlessandraSattaEneman, GeertGeertEnemanBrunco, DavidDavidBruncoDe Jaeger, BriceBriceDe JaegerOpsomer, KarlKarlOpsomerMeuris, MarcMarcMeurisClaeys, CorCorClaeys2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14479Source/drain junction integration issues in submicron Ge MOSFETsProceedings paper