Near hysteresis-free negative capacitance InGaAs tunnel FETs with enhanced digital and analog figures of merit below Vdd=400mV

Saeidi, AliAliSaeidiVerhulst, AnneAnneVerhulstStolichnov, IgorIgorStolichnovAlian, AliRezaAliRezaAlianIwai, HiroshiHiroshiIwaiCollaert, NadineNadineCollaertIonescu, AdrianAdrianIonescu2021-10-262021-10-262018-12https://imec-publications.be/handle/20.500.12860/31702Near hysteresis-free negative capacitance InGaAs tunnel FETs with enhanced digital and analog figures of merit below Vdd=400mVProceedings paperhttps://ieeexplore.ieee.org/document/8614583