Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETs

Sasaki, YuichiroYuichiroSasakiGodet, LudovicLudovicGodetChiarella, ThomasThomasChiarellaBrunco, DavidDavidBruncoRockwell, TylerTylerRockwellLee, Jae WooJae WooLeeColombeau, BenjaminBenjaminColombeauTogo, MitsuhiroMitsuhiroTogoChew, Soon AikSoon AikChewZschaetzsch, GerdGerdZschaetzschNoh, Kyung BongKyung BongNohDe Keersgieter, AnAnDe KeersgieterBoccardi, GuillaumeGuillaumeBoccardiKim, Min-SooMin-SooKimHellings, GeertGeertHellingsMartin, PatrickPatrickMartinVandervorst, WilfriedWilfriedVandervorstThean, AaronAaronTheanHoriguchi, NaotoNaotoHoriguchi2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/23040Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETsProceedings paper