Low-frequency noise behavior at low temperature (80K-300K) of silicon passivated Ge pMOSFETs with high-K metal gate stack

Guo, W.W.GuoCretu, B.B.CretuRoutoure, J.M.J.M.RoutoureCarin, R.R.CarinMercha, AbdelkarimAbdelkarimMerchaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12238Low-frequency noise behavior at low temperature (80K-300K) of silicon passivated Ge pMOSFETs with high-K metal gate stackProceedings paper