Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

Agostinelli, GuidoGuidoAgostinelliDelabie, AnneliesAnneliesDelabieDe Wolf, StefaanStefaanDe WolfDekkers, HaroldHaroldDekkersBeaucarne, GuyGuyBeaucarne2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8470Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative chargeProceedings paper