Epitaxial CVD growth of ultra-thin Si passivation layers on Ge using Si4H10 to enable growth temperatures down to 330 °C

Loo, RogerRogerLooVanherle, WendyWendyVanherleArimura, HiroakiHiroakiArimuraCott, DaireDaireCottWitters, LiesbethLiesbethWittersDouhard, BastienBastienDouhardMitard, JeromeJeromeMitardCollaert, NadineNadineCollaert2021-10-242021-10-242017-05https://imec-publications.be/handle/20.500.12860/28855Epitaxial CVD growth of ultra-thin Si passivation layers on Ge using Si4H10 to enable growth temperatures down to 330 °CProceedings paper