Wu, Tian-LiTian-LiWuFranco, JacopoJacopoFrancoMarcon, DenisDenisMarconDe Jaeger, BriceBriceDe JaegerBakeroot, BenoitBenoitBakerootKang, XuanwuXuanwuKangStoffels, SteveSteveStoffelsVan Hove, MarleenMarleenVan HoveGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27605Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETsProceedings paper