Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs

Meneghini, MatteoMatteoMeneghiniRossetto, IsabellaIsabellaRossettoBisi, DavideDavideBisiRuzzarin, MariaMariaRuzzarinVan Hove, MarleenMarleenVan HoveStoffels, SteveSteveStoffelsWu, Tian-LiTian-LiWuMarcon, DenisDenisMarconDecoutere, StefaanStefaanDecoutereMeneghesso, GaudioGaudioMeneghessoZanoni, EnricoEnricoZanoni2021-10-232021-10-2320160741-3106https://imec-publications.be/handle/20.500.12860/27002Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTsJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7407598