A 0.35μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components

Decoutere, StefaanStefaanDecoutereVleugels, FrankFrankVleugelsKuhn, RudigerRudigerKuhnLoo, RogerRogerLooCaymax, MattyMattyCaymaxJenei, SnezanaSnezanaJeneiCroon, JeroenJeroenCroonVan Huylenbroeck, StefaanStefaanVan HuylenbroeckDa Rold, MartinaMartinaDa RoldRosseel, ErikErikRosseelChevalier, P.P.ChevalierCoppens, P.P.Coppens2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4297A 0.35μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive componentsProceedings paper