Dual work function metal gate CMOS by means of full silicidation (FUSI)

Absil, PhilippePhilippeAbsilBiesemans, SergeSergeBiesemansKittl, JorgeJorgeKittlLauwers, AnneAnneLauwers2021-10-162021-10-162005-12https://imec-publications.be/handle/20.500.12860/9996Dual work function metal gate CMOS by means of full silicidation (FUSI)Journal article