Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry

Stafford, A.A.StaffordIrvine, S. J. C.S. J. C.IrvineBougrioua, ZahiaZahiaBougriouaJacobs, KoenKoenJacobsMoerman, IngridIngridMoermanThrush, E. J.E. J.ThrushConsidine, L.L.ConsidineCrawley., J.J.Crawley.2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4766Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometryProceedings paper