Anodic etching of n-GaN epilayer into porous GaN and its photoelectrochemical properties

Tseng, PeterPeterTsengvan Dorp, DennisDennisvan DorpLieten, RubenRubenLietenVereecken, PhilippePhilippeVereeckenBorghs, GustaafGustaafBorghs2021-10-222021-10-2220141932-7447https://imec-publications.be/handle/20.500.12860/24632Anodic etching of n-GaN epilayer into porous GaN and its photoelectrochemical propertiesJournal articlehttp://pubs.acs.org/doi/abs/10.1021/jp508314q