Bias dependence of gate oxide degradation of 90 nm CMOS transistors under 60 MeV proton irradiation

David, M-L.M-L.DavidSimoen, EddyEddySimoenClaeys, CorCorClaeysMohammazadeh, A.A.Mohammazadeh2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10288Bias dependence of gate oxide degradation of 90 nm CMOS transistors under 60 MeV proton irradiationProceedings paper