Griffoni, AlessioAlessioGriffoniThijs, StevenStevenThijsRuss, ChristianChristianRussTremouilles, DavidDavidTremouillesLinten, DimitriDimitriLintenScholz, MirkoMirkoScholzCollaert, NadineNadineCollaertWitters, LiesbethLiesbethWittersMeneghesso, GaudenzioGaudenzioMeneghessoGroeseneken, GuidoGuidoGroeseneken2021-10-172021-10-172009https://imec-publications.be/handle/20.500.12860/15400Next generation FinFET devices in bulk silicon technology and their benefits for ESD robustnessProceedings paper