Total-ionizing-dose effects and low-frequency noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 dielectrics

Bonaldo,BonaldoZhao,ZhaoO Hara,O HaraGorchichko,GorchichkoZhang,ZhangGerardin,GerardinPaccagnella,PaccagnellaWaldron, NiamhNiamhWaldronCollaert, NadineNadineCollaertPutcha, VamsiVamsiPutchaLinten, DimitriDimitriLintenPantelides,PantelidesReed,ReedSchrimpf,SchrimpfFleetwood,Fleetwood2021-10-282021-10-2820200018-9499https://imec-publications.be/handle/20.500.12860/34796Total-ionizing-dose effects and low-frequency noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 dielectricsJournal article10.1109/TNS.2019.2957028