Materials issues of Ni fully silicided (FUSI) gates for CMOS applications

Kittl, JorgeJorgeKittlLauwers, AnneAnneLauwersKmieciak, MalgorzataMalgorzataKmieciakDemeurisse, CarolineCarolineDemeurisseKottantharayil, AnilAnilKottantharayilVeloso, AnabelaAnabelaVelosoVan Dal, MarkMarkVan DalSchram, TomTomSchramBrijs, BertBertBrijsKaiser, M.M.KaiserKubicek, StefanStefanKubicekCunniffe, JohnJohnCunniffeVerbeeck, RitaRitaVerbeeckVrancken, ChristaChristaVranckenBiesemans, SergeSergeBiesemansMaex, KarenKarenMaex2021-10-162021-10-162005-05https://imec-publications.be/handle/20.500.12860/10700Materials issues of Ni fully silicided (FUSI) gates for CMOS applicationsProceedings paper