Investigation of the electrical properties of carbon doped Si0.75Ge0.25/Si hetero junction diodes by 2 MeV electron irradiation

Takakura, KenichiroKenichiroTakakuraOgata, H.H.OgataInoue, T.T.InoueYoneoka, M.M.YoneokaTsunoda, I.I.TsunodaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25978Investigation of the electrical properties of carbon doped Si0.75Ge0.25/Si hetero junction diodes by 2 MeV electron irradiationProceedings paperhttp://icds-2015.org/wp-content/uploads/sites/7/2015/07/Posters-program_ICDS-2015.pdf