Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy

Nuytten, ThomasThomasNuyttenBogdanowicz, JanuszJanuszBogdanowiczWitters, LiesbethLiesbethWittersEneman, GeertGeertEnemanHantschel, ThomasThomasHantschelSchulze, AndreasAndreasSchulzeFavia, PaolaPaolaFaviaBender, HugoHugoBenderDe Wolf, IngridIngridDe WolfVandervorst, WilfriedWilfriedVandervorst2021-10-262021-10-2620182166-532Xhttps://imec-publications.be/handle/20.500.12860/31434Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopyJournal articlehttp://aip.scitation.org/doi/abs/10.1063/1.4999277