The influence of oxide thickness and indium amount on the analog parameters of gas phase Zn diffusion InxGa1-xAs nTFETs

Bordallo, CaioCaioBordalloMartino, JoaoJoaoMartinoAgopian, PaulaPaulaAgopianAlian, AliRezaAliRezaAlianMols, YvesYvesMolsRooyackers, RitaRitaRooyackersVandooren, AnneAnneVandoorenVerhulst, AnneAnneVerhulstSimoen, EddyEddySimoenClaeys, CorCorClaeysCollaert, NadineNadineCollaert2021-10-242021-10-2420170018-9383https://imec-publications.be/handle/20.500.12860/27896The influence of oxide thickness and indium amount on the analog parameters of gas phase Zn diffusion InxGa1-xAs nTFETsJournal articlehttp://ieeexplore.ieee.org/document/8000584/