Reduction of plasma process induced damage during gate poly etching by using the SiO2 hard maks

Lee, Hean-ChealHean-ChealLeeCreusen, MartinMartinCreusenGroeseneken, GuidoGuidoGroesenekenVanhaelemeersch, SergeSergeVanhaelemeersch2021-09-302021-09-301998https://imec-publications.be/handle/20.500.12860/2713Reduction of plasma process induced damage during gate poly etching by using the SiO2 hard maksProceedings paper