Growth techniques to reduce V-defect density in GaN and AlGaN layers grown on 200 mm Si (111) substrate

Liang, HuHuLiangSaripalli, YogaYogaSaripalliKandaswamy, Prem KumarPrem KumarKandaswamyCarlson, Eric PorterEric PorterCarlsonFavia, PaolaPaolaFaviaRichard, OlivierOlivierRichardBender, HugoHugoBenderZhao, MingMingZhaoThapa, Sarad BahadurSarad BahadurThapaVancoille, EricEricVancoille2021-10-222021-10-2220141610-1634https://imec-publications.be/handle/20.500.12860/24138Growth techniques to reduce V-defect density in GaN and AlGaN layers grown on 200 mm Si (111) substrateJournal articlehttp://onlinelibrary.wiley.com/doi/10.1002/pssc.201300555/abstract