CMOS Device Scaling by Nanosheet Channel Architectures and New Channel Materials

Horiguchi, NaotoNaotoHoriguchi2023-12-122023-08-242023-08-262023-12-122023-06-112161-4636WOS:001035434300001https://imec-publications.be/handle/20.500.12860/42389CMOS Device Scaling by Nanosheet Channel Architectures and New Channel MaterialsProceedings paper978-4-86348-808-3WOS:001035434300001Electrical & electronic engineeringnanosheetCFEThigh mobility channel2D materials