Evaluation and solutions for P/E window instability induced by electron trapping in high-k inter-gate dielectrics of flash memory cells

Tang, BaojunBaojunTangZhang, WeidongWeidongZhangDegraeve, RobinRobinDegraeveBreuil, LaurentLaurentBreuilBlomme, PieterPieterBlommeZhang, JianfuJianfuZhangJi, ZhigangZhigangJiZahid, MohammedMohammedZahidToledano Luque, MariaMariaToledano LuqueVan den Bosch, GeertGeertVan den BoschVan Houdt, JanJanVan Houdt2021-10-222021-10-2220140018-9383https://imec-publications.be/handle/20.500.12860/24596Evaluation and solutions for P/E window instability induced by electron trapping in high-k inter-gate dielectrics of flash memory cellsJournal articlehttp://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?reload=true&arnumber=6782720