Design of a High-Speed Waveguide Ge/Si SACM Avalanche Photodiode

Shahin, AmirAmirShahinBerciano, MathiasMathiasBercianoCoughlan, ConorConorCoughlanYudistira, DiditDiditYudistiraLoo, RogerRogerLooKandeel, AhmedAhmedKandeelVerheyen, PeterPeterVerheyenKobbi, HakimHakimKobbiChakrabarti, MaumitaMaumitaChakrabartiVan Thourhout, DriesDriesVan ThourhoutVan Campenhout, JorisJorisVan Campenhout2026-06-042026-06-0420250733-8724https://imec-publications.be/handle/20.500.12860/59546We report on a waveguide-coupled (WG) vertical Germanium on Silicon (Ge-on-Si) Separate Absorption Charge Multiplication (SACM) Avalanche Photodiode (APD) achieving 3dB-bandwidths of 50 GHz and 30 GHz at an O-band responsivity of 3 A/W and 6 A/W respectively, combined with dark current levels below 50 nA. The experimental measurements are supported by a modeling approach showing how to optimize the SACM-APD charge layer to target high-speed performance.engDesign of a High-Speed Waveguide Ge/Si SACM Avalanche PhotodiodeJournal article10.1109/jlt.2025.3594842WOS:001574225500019FREQUENCY-RESPONSEDEAD SPACEGAINIONIZATIONNOISESI