Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

Bayerl, AlbinAlbinBayerlLanza, MarioMarioLanzaAguilera, LidiaLidiaAguileraPorti, MarcMarcPortiNafria, MontserratMontserratNafriaAymerich, XavierXavierAymerichDe Gendt, StefanStefanDe Gendt2021-10-212021-10-2120130026-2714https://imec-publications.be/handle/20.500.12860/22026Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursorsJournal articlehttp://www.sciencedirect.com/science/article/pii/S0026271413000486