In-line characterisation of hetero bipolar transistor base layers and pMOS devices with embedded SiGe by high-resolution X-ray diffraction

Hikavyy, AndriyAndriyHikavyyNguyen, DuyDuyNguyenLoo, RogerRogerLooRyan, P.P.RyanWormington, M.M.WormingtonHopkins, J.J.Hopkins2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13879In-line characterisation of hetero bipolar transistor base layers and pMOS devices with embedded SiGe by high-resolution X-ray diffractionProceedings paper