Characterization of highly doped Si:P, Si:As and Si:P:As epi layers for source/drain epitaxy

Rosseel, ErikErikRosseelTirrito, MatteoMatteoTirritoPorret, ClémentClémentPorretDouhard, BastienBastienDouhardMeersschaut, JohanJohanMeersschautHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooHoriguchi, NaotoNaotoHoriguchiPourtois, GeoffreyGeoffreyPourtoisNakazaki, NobuyaNobuyaNakazakiTolle, JohnJohnTolle2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/33908Characterization of highly doped Si:P, Si:As and Si:P:As epi layers for source/drain epitaxyProceedings paperhttp://ecst.ecsdl.org/content/93/1/11.abstract