Effect of test structure on electromigration characteristics in 3D-TSV stacked devices

Oba, YoshiyukiYoshiyukiObaDe Messemaeker, JokeJokeDe MessemaekerTyrovouzi, Anna-MariaAnna-MariaTyrovouziMiyamori, YuichiYuichiMiyamoriDe Vos, JoeriJoeriDe VosWang, TengTengWangBeyer, GeraldGeraldBeyerBeyne, EricEricBeyneDe Wolf, IngridIngridDe WolfCroes, KristofKristofCroes2021-10-222021-10-2220150021-4922https://imec-publications.be/handle/20.500.12860/25698Effect of test structure on electromigration characteristics in 3D-TSV stacked devicesJournal articlehttp://m.iopscience.iop.org/1347-4065/54/5S/05EE01/pdf/1347-4065_54_5S_05EE01.pdf