Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process

Kang, JinFengJinFengKangYu, HongYuHongYuYuRen, C.C.RenWang, X.P.X.P.WangLi, M.F.M.F.LiChan, D.S.H.D.S.H.ChanYeo, Y.C.Y.C.YeoSa, N.N.SaYang, H.H.YangLiu, X.Y.X.Y.LiuHan, R.Q.R.Q.HanKwong, D.L.D.L.Kwong2021-10-162021-10-162005-04https://imec-publications.be/handle/20.500.12860/10675Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first processJournal article