SiGe recessed source-drain (RSD) stressors for PMOS: effect of device integration flow and increased Ge content on electrical performance

Machkaoutsan, VladimirVladimirMachkaoutsanVerheyen, PeterPeterVerheyenTomasini, P.P.TomasiniEneman, GeertGeertEnemanLoo, RogerRogerLooAbsil, PhilippePhilippeAbsilThomas, S.G.S.G.ThomasLu, Jiong PingJiong PingLuWeijtmans, J.W.J.W.WeijtmansWise, R.R.Wise2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12532SiGe recessed source-drain (RSD) stressors for PMOS: effect of device integration flow and increased Ge content on electrical performanceProceedings paper