Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies

Kmieciak, MalgorzataMalgorzataKmieciakKittl, JorgeJorgeKittlChamirian, OxanaOxanaChamirianVeloso, AnabelaAnabelaVelosoLauwers, AnneAnneLauwersSchram, TomTomSchramMaex, KarenKarenMaexVantomme, AndreAndreVantomme2021-10-152021-10-152004-08https://imec-publications.be/handle/20.500.12860/9132Investigation of Ni fully silicided gates for sub-45 nm CMOS technologiesJournal article