Kaczer, BenBenKaczerDegraeve, RobinRobinDegraeveFranco, JacopoJacopoFrancoGrasser, T.T.GrasserRoussel, PhilippePhilippeRousselBury, ErikErikBuryWeckx, PieterPieterWeckxVaisman Chasin, AdrianAdrianVaisman ChasinTyaginov, StanislavStanislavTyaginovVandemaele, MichielMichielVandemaeleGrill, AlexanderAlexanderGrillO'Sullivan, BarryBarryO'SullivanDiaz Fortuny, JavierJavierDiaz FortunySaraza Canflanca, PabloPabloSaraza CanflancaWaltl, M.M.WaltlRinaudo, PietroPietroRinaudoZhao, YingYingZhaoKao, EthanEthanKaoAsanovski, RubenRubenAsanovskiCatapano, EdoardoEdoardoCatapanoBeckers, ArnoutArnoutBeckersVici, AndreaAndreaViciTruijen, BrechtBrechtTruijenHigashi, YusukeYusukeHigashiClima, SergiuSergiuClimaXiang, YangYangXiangSangani, DishantDishantSanganiPanarella, LucaLucaPanarellaSmets, QuentinQuentinSmetsKnobloch, T.T.KnoblochWaldhoer, D.D.WaldhoerVan Troeye, BenoitBenoitVan TroeyeGuo, YuanyangYuanyangGuoKruv, AnastasiiaAnastasiiaKruvViswakarma, K.K.ViswakarmaGonzalez, MarioMarioGonzalezLinten, DimitriDimitriLinten2024-10-272024-10-272024979-8-3503-9164-02161-4636WOS:001309996500002https://imec-publications.be/handle/20.500.12860/44693Gate oxide reliability: upcoming trends, challenges, and opportunitiesProceedings paper10.1109/SNW63608.2024.10639245979-8-3503-9163-3WOS:001309996500002