Van Campenhout, JorisJorisVan CampenhoutKim, M.M.KimCoughlan, ConorConorCoughlanShahin, AmirAmirShahinAhmad, ZohauddinZohauddinAhmadBruynsteen, CedricCedricBruynsteenda Silva, LeandroLeandroda SilvaSingh, NishantNishantSinghMalik, DharmanderDharmanderMalikMuliuk, GrigorijGrigorijMuliukYudistira, DiditDiditYudistiraVaskasi, J. R.J. R.VaskasiJakanadan, ShaliniShaliniJakanadanLepage, GuyGuyLepageMarchese, ChiaraChiaraMarcheseKaushik, ShuchiShuchiKaushikLoo, RogerRogerLooShimura, YosukeYosukeShimuraKobbi, HakimHakimKobbiMagdziak, RafalRafalMagdziakSar, HuseyinHuseyinSarBode, DieterDieterBodeBipul, SwetanshuSwetanshuBipulCarolan, PatrickPatrickCarolanAgati, MartaMartaAgatiVan Thourhout, DriesDriesVan ThourhoutVerheyen, PeterPeterVerheyenChakrabarti, MaumitaMaumitaChakrabartiDe Heyn, PeterPeterDe HeynVelenis, DimitriosDimitriosVelenisOssieur, PeterPeterOssieurFerraro, FilippoFilippoFerraroBan, YoojinYoojinBan2026-08-212026-08-212025979-8-3315-6786-62380-9248https://imec-publications.be/handle/20.500.12860/60090We review the recent performance of high-speed, high-efficiency electro-optical modulators and photo-detectors, targeting next-generation co-packaged optics (CPO) operating at 400G/lane and future Optical I/O (OIO), employing a "wide-and-slow" parallel interface. We focus on compact devices, including Si ring and disk modulators, as well as electro-absorption modulators implemented in Ge(Si) or through heterogeneous InP-on-Si integration. Finally, we provide a performance overview of recently developed Si-integrated Ge photodetectors, capable of supporting both next-generation CPO and Optical I/O.engProceedings paper10.1109/iedm50572.2025.11353833WOS:001701480300248