Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

Tang, Shun-WeiShun-WeiTangBakeroot, BenoitBenoitBakerootHuang, Zhen-HongZhen-HongHuangChen, Szu-ChiaSzu-ChiaChenLin, Wei-SyuanWei-SyuanLinLo, Ting-ChunTing-ChunLoBorga, MatteoMatteoBorgaWellekens, DirkDirkWellekensPosthuma, NielsNielsPosthumaDecoutere, StefaanStefaanDecoutereWu, Tian-LiTian-LiWu2023-05-162023-01-252023-01-272023-05-162023-020018-9383WOS:000910525500001https://imec-publications.be/handle/20.500.12860/41025Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTsJournal article10.1109/TED.2022.3231566WOS:000910525500001V-TH