Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3-4 nm wide fins and 20 nm gate length for quantum computing applications

Gupta, SumretiSumretiGuptaRathi, AartiAartiRathiParvais, BertrandBertrandParvaisDixit, AbhisekAbhisekDixit2022-03-032022-03-0320210038-1101WOS:000709200800003https://imec-publications.be/handle/20.500.12860/39272Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3-4 nm wide fins and 20 nm gate length for quantum computing applicationsJournal article10.1016/j.sse.2021.108089WOS:000709200800003MOSFETMOBILITY