Photoanodic pyramid texturization of n-Ge (100) in HCl solution: unexpected anisotropy in the surface chemistry of etching

Abrenica, GranielGranielAbrenicaLebedev, MikhailMikhailLebedevLe, HyHyLeHajduk, AndreasAndreasHajdukFingerle, MathiasMathiasFingerleMayer, ThomasThomasMayerDe Gendt, StefanStefanDe Gendtvan Dorp, DennisDennisvan Dorp2021-10-272021-10-2720192050-7526https://imec-publications.be/handle/20.500.12860/32401Photoanodic pyramid texturization of n-Ge (100) in HCl solution: unexpected anisotropy in the surface chemistry of etchingJournal articlehttps://pubs.rsc.org/en/content/articlelanding/2019/tc/c8tc06091f#!divAbstract