Segregation and activation of Sb implanted in Si by UV nanosecond-laser-anneal-induced non-equillibrium solidification

Tabata, ToshiyukiToshiyukiTabataRaynal, Pierre-EdouardPierre-EdouardRaynalHuet, KarimKarimHuetEveraert, Jean-LucJean-LucEveraert2021-10-292021-10-2920200021-8979https://imec-publications.be/handle/20.500.12860/36040Segregation and activation of Sb implanted in Si by UV nanosecond-laser-anneal-induced non-equillibrium solidificationJournal article10.1063/5.0005176