Selective growth of strained GE channel on relaxed SiGe buffer in shallow trench isolation for high mobility Ge planar and Fin pFET

Vincent, BenjaminBenjaminVincentWitters, LiesbethLiesbethWittersRichard, OlivierOlivierRichardHikavyy, AndriyAndriyHikavyyBender, HugoHugoBenderLoo, RogerRogerLooCaymax, MattyMattyCaymaxThean, AaronAaronThean2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/21807Selective growth of strained GE channel on relaxed SiGe buffer in shallow trench isolation for high mobility Ge planar and Fin pFETProceedings paper