Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

Simoen, EddyEddySimoenVeloso, AnabelaAnabelaVelosoMatagne, PhilippePhilippeMatagneClaeys, CorCorClaeys2024-03-122023-07-272024-03-1220230038-1101WOS:001026510000001https://imec-publications.be/handle/20.500.12860/42212Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETsJournal article10.1016/j.sse.2022.108576WOS:001026510000001