Gate-Induced-Drain-Leakage (GIDL) in CMOS Enhanced by Mechanical Stress

Lee, KookjinKookjinLeeKaczer, BenBenKaczerKruv, AnastasiiaAnastasiiaKruvGonzalez, MarioMarioGonzalezEneman, GeertGeertEnemanOkudur, Oguzhan OrkutOguzhan OrkutOkudurGrill, AlexanderAlexanderGrillDe Wolf, IngridIngridDe Wolf2023-01-032022-03-262023-01-0320220018-9383WOS:000767811600001https://imec-publications.be/handle/20.500.12860/39531Gate-Induced-Drain-Leakage (GIDL) in CMOS Enhanced by Mechanical StressJournal article10.1109/TED.2022.3154341WOS:000767811600001IMPACT IONIZATIONMOSFETSSTRAIN