Impact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs

Kudina, ValeriyaValeriyaKudinaGarbar, NicolaiNicolaiGarbarSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-222021-10-2220150038-1101https://imec-publications.be/handle/20.500.12860/25495Impact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETsJournal articlehttp://www.sciencedirect.com/science/article/pii/S0038110114002937