Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

Simoen, EddyEddySimoenClaeys, CorCorClaeysJob, R.R.JobUlyashin, A.G.A.G.UlyashinFahrner, W.R.W.R.FahrnerTonelli, G.G.TonelliDe Gryse, O.O.De GryseClauws, P.P.Clauws2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/8140Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation stepJournal article