Tsai, WilmanWilmanTsaiCarter, RichardRichardCarterNohira, HiroshiHiroshiNohiraCaymax, MattyMattyCaymaxConard, ThierryThierryConardCosnier, VincentVincentCosnierDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeynsPetry, JasmineJasminePetryRichard, OlivierOlivierRichardVandervorst, WilfriedWilfriedVandervorstYoung, EdwardEdwardYoungZhao, ChaoChaoZhaoMaes, JanJanMaesTuominen, M.M.TuominenSchulte, W.H.W.H.SchulteGarfunkel, E.E.GarfunkelGustafsson, T.T.Gustafsson2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/8228Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor depositionJournal article